• Manual wafer loading and unloading with programmable temperature regulation
• Overall dimensions: 1710 mm × 1080 mm × 2500 mm
• Suitable for growth process exploration and small-batch sample preparation of two-dimensional materials, including transition metal dichalcogenides and graphene
• Wafer diameter: ≤ 4 inches
• Equipped with dry pumping system
• Ultimate vacuum: better than 1×10‾³ Torr
• Operating vacuum range: 37.5 ~ 3.75 Torr
• Heating temperature: Room Temperature ~ 1200℃, temperature control accuracy ±5℃
• Temperature uniformity: Customizable within ±10℃ over 4-inch wafer area
• Process and carrier gas: Single-channel N₂  / Ar
• Precursor supply: Two-channel metal-organic precursors, supporting manual and semi-automatic control modes
• Operating system: Extremo D2.0

Application Demonstration