| characteristic |
| Independently controllable pure domestically produced core components |
| Domestic consumables with lower operating costs |
| Split type airflow channel simplifies equipment maintenance |
| Excellent uniformity of epitaxial wafers, with uniformity<2% |
| Excellent flow field, temperature field uniformity, and control stability |
| Automated operating system and visual data analysis system |
| Equipped with advanced in-situ detection system |
| Technical Parameter | |
| Type of cavity | Vertical reactor, tray controllable rotation system |
| Pressure Range | 0-600 kPa |
| Wafer size | 37X2 inch, 7X4 inch, 3X6 inch, 1X8 inch, 1X12 inch |
| Gas source configuration | 8 metal organic source pipelines, 4 hydride pipelines |
| Heating system | Three temperature zone heating, with a maximum temperature of 1300 ℃ |
| Equipment size | 6150*1200*2300 (mm) |
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